NGB8206NTF4G
INSULATED GATE BIPOLAR TRANSISTOManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGB8206NTF4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This surface-mount device features a collector-emitter breakdown voltage of 390 V and a continuous collector current capability of 20 A. With a maximum power dissipation of 150 W, the NGB8206NTF4G offers robust performance in a D2PAK (TO-263-3, D2PAK) package. The device exhibits a typical Vce(on) of 1.9 V at 4.5 V gate-emitter voltage and 20 A collector current, ensuring efficient operation. Its logic input type simplifies integration into various control circuits. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Power - Max | 150 W |
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