NGB8206NTF4
IGBT 390V 20A 150W D2PAK3Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi NGB8206NTF4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This single IGBT features a collector-emitter voltage (Vce) of 390V and a continuous collector current (Ic) of 20A, with a pulsed capability of 50A. It offers a maximum power dissipation of 150W and a low on-state voltage (Vce(on)) of 1.9V at 4.5V gate-emitter voltage and 20A collector current, as tested under 300V, 9A, 1kOhm, 5V conditions. The NGB8206NTF4 utilizes a logic input type and is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount package, supplied on tape and reel. This component is commonly found in power supply, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/5µs |
| Switching Energy | - |
| Test Condition | 300V, 9A, 1kOhm, 5V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
FGY160T65SPD-F085
650V FS GEN3 TRENCH IGBT
NGD18N40CLBT4
IGBT 430V 15A DPAK
NGTB60N60SWG
IGBT 600V 120A 298W TO247
