NGB8206N
IGBT 390V 20A 150W D2PAKManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGB8206N is a 390V, 20A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a logic input type and a maximum power dissipation of 150W. The collector-emitter on-voltage (Vce(on)) is specified at 1.9V at 4.5V gate-emitter voltage and 20A collector current, under test conditions of 300V, 9A, 1kOhm, and 5V. It offers a pulsed collector current capability of 50A and operates across a wide temperature range of -55°C to 175°C. The NGB8206N is housed in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package, suitable for demanding applications in industrial automation, electric vehicle charging, and power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/5µs |
| Switching Energy | - |
| Test Condition | 300V, 9A, 1kOhm, 5V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 150 W |
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