NGB8204NT4G
IGBT 430V 18A 115W D2PAKManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGB8204NT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This single IGBT features a collector-emitter breakdown voltage of 430V and a continuous collector current capability of 18A, with a pulsed current handling of up to 50A. The device exhibits a low Vce(on) of 2.5V at 4V gate-emitter voltage and 15A collector current, contributing to efficient operation. With a maximum power dissipation of 115W and an operating temperature range from -55°C to 175°C, it is suitable for robust environments. The NGB8204NT4G utilizes a logic input type and is supplied in a surface-mount D2PAK (TO-263-3) package, facilitating automated assembly. This component is commonly found in industrial motor control, power factor correction, and uninterruptible power supply (UPS) systems. It is available in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 4V, 15A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 430 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 115 W |
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