NGB8204ANT4G
INSULATED GATE BIPOLAR TRANSISTOManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGB8204ANT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 430 V and a continuous collector current capability of 18 A, with a pulsed current of 50 A. Its low on-state voltage of 2.5 V at 4 V gate-emitter voltage and 15 A collector current, coupled with a maximum power dissipation of 115 W, ensures efficient operation. The NGB8204ANT4G utilizes a surface mount D2PAK (TO-263-3) package for robust thermal management and assembly. Its logic input type and wide operating temperature range of -55°C to 175°C make it suitable for industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 4V, 15A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 430 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 115 W |
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