NGB8202NT4G
IGBT 440V 20A 150W D2PAKManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGB8202NT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 440V and a continuous collector current rating of 20A, with a pulsed capability of 50A. The device offers a maximum power dissipation of 150W, making it suitable for power switching in industrial motor drives, uninterruptible power supplies (UPS), and automotive applications. It utilizes a logic input type and a Vce(on) of 1.9V at 4.5V gate-emitter voltage and 20A collector current, under test conditions of 300V, 9A, 1kOhm, and 5V. The NGB8202NT4G is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package, supplied on tape and reel. Its operating temperature range extends from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/5µs |
| Switching Energy | - |
| Test Condition | 300V, 9A, 1kOhm, 5V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 440 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 150 W |
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