NGB8202NT4
IGBT 440V 20A 150W D2PAKManufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
onsemi NGB8202NT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 440V collector-emitter breakdown voltage and a continuous collector current rating of 20A, with a pulsed capability of 50A. The NGB8202NT4 offers a maximum power dissipation of 150W and a low on-state voltage (Vce(on)) of 1.9V at 4.5V gate-emitter voltage and 20A collector current, under test conditions of 300V and 9A. Its logic input type ensures straightforward integration into control circuitry. The device is housed in a TO-263-3, D2PAK surface-mount package, ideal for automated assembly processes. Operating across a wide temperature range from -55°C to 175°C (TJ), this IGBT is suited for use in industrial power supplies, motor control, and automotive applications. Supplied in Tape & Reel packaging for efficient manufacturing.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/5µs |
| Switching Energy | - |
| Test Condition | 300V, 9A, 1kOhm, 5V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 440 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
FGY160T65SPD-F085
650V FS GEN3 TRENCH IGBT
NGD18N40CLBT4
IGBT 430V 15A DPAK
NCG225L75NF8M1
IGBT 750V 225A FS4 DIE
