NGB18N40CLBT4G
IGBT 430V 18A 115W D2PAKManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGB18N40CLBT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This surface mount device features a collector-emitter voltage (Vce) of 430V and a continuous collector current (Ic) of 18A. With a pulse current (Icm) capability of 50A and a maximum power dissipation of 115W, it is well-suited for high-power switching. The IGBT exhibits a low on-state voltage (Vce(on)) of 2.5V at 4V gate-emitter voltage and 15A collector current, optimizing conduction losses. Its logic input type ensures compatibility with a wide range of control signals. Packaged in a D2PAK (TO-263-3) for efficient thermal management and surface mount assembly, the NGB18N40CLBT4G operates across a broad temperature range of -55°C to 175°C. This component finds application in industrial motor drives, power supplies, and welding equipment. Supplied on tape and reel for automated manufacturing.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 4V, 15A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 430 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 115 W |
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