NGB18N40CLBT4
IGBT 430V 18A 115W D2PAKManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGB18N40CLBT4 is a 430V, 18A insulated gate bipolar transistor (IGBT) designed for surface mount applications. This component features a maximum continuous collector current (Ic) of 18A and a pulsed collector current (Icm) of 50A. With a low collector-emitter saturation voltage (Vce(on)) of 2.5V at 4V gate-emitter voltage and 15A collector current, it offers efficient power handling up to 115W. The NGB18N40CLBT4 is packaged in a D2PAK (TO-263-3) surface mount package, supplied on tape and reel. Its operating temperature range is -55°C to 175°C (TJ). This device is suitable for use in industrial applications requiring robust power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 4V, 15A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 430 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 115 W |
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