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NGB15N41CLT4G

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NGB15N41CLT4G

IGBT N-CHAN 15A 410V D2PAK

Manufacturer: onsemi

Categories: Single IGBTs

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The onsemi NGB15N41CLT4G is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 440V collector-emitter breakdown voltage and a continuous collector current rating of 15A, with a pulsed capability of up to 50A. The NGB15N41CLT4G offers a maximum power dissipation of 107W and a low on-state voltage (Vce(on)) of 2.1V at 4.5V gate-emitter voltage and 10A collector current, ensuring efficient operation. Its logic input type simplifies control, and it is supplied in a surface-mount D2PAK (TO-263-3) package for robust thermal management. This IGBT is commonly utilized in industrial power supplies, motor drives, and uninterruptible power systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Input TypeLogic
Vce(on) (Max) @ Vge, Ic2.1V @ 4.5V, 10A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C-/4µs
Switching Energy-
Test Condition300V, 6.5A, 1kOhm
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)440 V
Current - Collector Pulsed (Icm)50 A
Power - Max107 W

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