NCG225L75NF8M1
IGBT 750V 225A FS4 DIEManufacturer: onsemi
Categories: Single IGBTs
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onsemi NCG225L75NF8M1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This die-level component offers a collector-emitter breakdown voltage of 750 V and a continuous collector current capability of 225 A, with a pulsed current rating of 675 A. The IGBT type features Trench Field Stop technology, optimizing performance characteristics. Key parameters include a gate charge of 690 nC and a typical on-state voltage (Vce(on)) of 1.75 V at 15 V gate-emitter voltage and 200 A collector current. Switching times are rated at 104 ns turn-on and 122 ns turn-off at 25°C. The operating temperature range is -40°C to 175°C (TJ). This component is suitable for demanding applications in power generation, industrial motor drives, and electric vehicle powertrains. It is supplied in wafer form and packaged for tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 15V, 200A |
| Supplier Device Package | Wafer |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 104ns/122ns |
| Switching Energy | - |
| Test Condition | 400V, 225A, 2Ohm, 15V |
| Gate Charge | 690 nC |
| Current - Collector (Ic) (Max) | 225 A |
| Voltage - Collector Emitter Breakdown (Max) | 750 V |
| Current - Collector Pulsed (Icm) | 675 A |
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