ISL9V3036S3ST-F085C
IGBT 360V 21A TO263Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi ISL9V3036S3ST-F085C is a 360V, 21A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a logic-level gate input for simplified drive requirements and a low on-state voltage (Vce(on)) of 1.6V at 4V gate-source voltage and 6A collector current, minimizing conduction losses. With a maximum power dissipation of 150W and a collector current capability of 21A, it is suitable for demanding thermal environments. The device exhibits a typical gate charge of 17 nC and a reverse recovery time of 2.1 µs, contributing to efficient switching performance. Packaged in a TO-263-3, D2PAK surface-mount configuration, the ISL9V3036S3ST-F085C is AEC-Q101 qualified, making it appropriate for automotive and industrial power management systems. Its operating temperature range extends from -40°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Logic |
| Reverse Recovery Time (trr) | 2.1 µs |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 4V, 6A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 700ns/4.8µs |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 17 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 21 A |
| Voltage - Collector Emitter Breakdown (Max) | 360 V |
| Power - Max | 150 W |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
NGTB30N120LWG
IGBT 1200V 30A TO247
NGTB35N60FL2WG
IGBT TRENCH/FS 600V 70A TO247
FGD3245G2-F085
IGBT 450V 23A TO252AA
