HGTP7N60A4D
IGBT 600V 34A 125W TO220ABManufacturer: onsemi
Categories: Single IGBTs
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onsemi HGTP7N60A4D is a 600V, 34A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device offers a maximum collector current of 34A and a pulsed collector current of 56A, with a low on-state voltage of 2.7V at 15V gate-emitter voltage and 7A collector current. Key parameters include a gate charge of 37 nC and switching energies of 55µJ (on) and 60µJ (off) under test conditions of 390V, 7A, 25 Ohm, and 15V. The HGTP7N60A4D provides a robust operating temperature range of -55°C to 150°C. Its TO-220-3 package facilitates through-hole mounting. This component is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 34 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 11ns/100ns |
| Switching Energy | 55µJ (on), 60µJ (off) |
| Test Condition | 390V, 7A, 25Ohm, 15V |
| Gate Charge | 37 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 56 A |
| Power - Max | 125 W |
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