HGTP7N60A4-F102
IGBT 600V 34A TO220-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTP7N60A4-F102 is a 600V, 34A Insulated Gate Bipolar Transistor (IGBT) housed in a TO-220-3 package. This device offers a maximum collector power dissipation of 125W and features a continuous collector current of 34A, with a pulsed capability of 56A. Key performance parameters include a gate charge of 60 nC and an on-state voltage drop (Vce(on)) of 2.7V at 15V gate-emitter voltage and 7A collector current. Switching characteristics at 390V, 7A with a 25 Ohm load and 15V gate drive indicate typical turn-on delay (Td(on)) of 11ns and turn-off delay (Td(off)) of 100ns, with corresponding switching energies of 55µJ (on) and 150µJ (off). The HGTP7N60A4-F102 operates across a temperature range of -55°C to 150°C (TJ) and is supplied in tubes. This component is suitable for applications in power conversion and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 11ns/100ns |
| Switching Energy | 55µJ (on), 150µJ (off) |
| Test Condition | 390V, 7A, 25Ohm, 15V |
| Gate Charge | 60 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 56 A |
| Power - Max | 125 W |
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