HGTP7N60A4
IGBT 600V 34A TO220-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTP7N60A4 is a 600V, 34A Insulated Gate Bipolar Transistor (IGBT) in a TO-220-3 through-hole package. This component offers a maximum collector power dissipation of 125W and a continuous collector current of 34A, with a pulsed collector current capability of 56A. Key performance parameters include a typical gate charge of 37 nC and switching energies of 55µJ (on) and 60µJ (off) under test conditions of 390V, 7A, 25 Ohm, and 15V. The on-state voltage (Vce(on)) is a maximum of 2.7V at 15V gate-emitter voltage and 7A collector current. Switching times at 25°C are characterized as 11ns (turn-on) and 100ns (turn-off). It operates across a temperature range of -55°C to 150°C (TJ). This device is suitable for applications in power factor correction, uninterruptible power supplies (UPS), and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 11ns/100ns |
| Switching Energy | 55µJ (on), 60µJ (off) |
| Test Condition | 390V, 7A, 25Ohm, 15V |
| Gate Charge | 37 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 56 A |
| Power - Max | 125 W |
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