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HGTP2N120CN

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HGTP2N120CN

IGBT 1200V 13A 104W TO220AB

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi HGTP2N120CN is a 1200V NPT IGBT designed for high-voltage switching applications. This component features a collector current capability of 13A (20A pulsed) and a maximum power dissipation of 104W. The TO-220-3 package with through-hole mounting is suitable for demanding thermal environments. Key electrical characteristics include a Vce(on) of 2.4V at 15V gate drive and 2.6A, with a gate charge of 30 nC. Switching performance is characterized by typical turn-on and turn-off delays of 25ns and 205ns respectively at 25°C, with switching energies of 96µJ (on) and 355µJ (off) under the specified test conditions (960V, 2.6A, 51 Ohm, 15V). The HGTP2N120CN is commonly utilized in industrial power supplies, motor control, and renewable energy systems. It operates across a wide junction temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 2.6A
Supplier Device PackageTO-220-3
IGBT TypeNPT
Td (on/off) @ 25°C25ns/205ns
Switching Energy96µJ (on), 355µJ (off)
Test Condition960V, 2.6A, 51Ohm, 15V
Gate Charge30 nC
Current - Collector (Ic) (Max)13 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)20 A
Power - Max104 W

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