HGTP20N60A4
IGBT 600V 70A TO220-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTP20N60A4 is a 600V, 70A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a maximum collector current of 70A and a pulsed collector current of 280A. With a power dissipation rating of 290W and a collector-emitter saturation voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 20A collector current, it offers efficient power handling. The device exhibits typical turn-on and turn-off times of 15ns and 73ns respectively at 25°C, with switching energy values of 105µJ (on) and 150µJ (off). The HGTP20N60A4 is packaged in a TO-220-3 through-hole configuration and operates within a temperature range of -55°C to 150°C. This IGBT is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and general-purpose inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/73ns |
| Switching Energy | 105µJ (on), 150µJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 280 A |
| Power - Max | 290 W |
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