HGTP12N60C3D
IGBT 600V 24A TO220-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTP12N60C3D is a 600V, 24A insulated gate bipolar transistor (IGBT) designed for high-performance power switching applications. This through-hole component, packaged in a TO-220-3 configuration, offers a maximum continuous collector current of 24A and a pulsed collector current of 96A. Key electrical characteristics include a Vce(on) of 2.2V at 15V gate-source voltage and 15A collector current, and a gate charge of 48 nC. With a maximum power dissipation of 104W and an operating temperature range of -40°C to 150°C, the HGTP12N60C3D is suitable for demanding industrial power supplies, motor control, and lighting applications. Its switching energy is specified at 380µJ (on) and 900µJ (off), with a reverse recovery time of 40 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | 380µJ (on), 900µJ (off) |
| Test Condition | - |
| Gate Charge | 48 nC |
| Current - Collector (Ic) (Max) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 104 W |
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