HGTP12N60C3
IGBT 600V 24A 104W TO220ABManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTP12N60C3 is a 600V, 24A Insulated Gate Bipolar Transistor (IGBT) in a TO-220-3 package. This device features a maximum power dissipation of 104W and a collector current capability of 24A continuous, with a pulsed current rating of 96A. The HGTP12N60C3 exhibits a Vce(on) of 2V at 15V Vge and 12A Ic, with a typical gate charge of 48 nC. Switching energy is rated at 380µJ (on) and 900µJ (off). Designed for through-hole mounting, this component operates across a temperature range of -40°C to 150°C (TJ). It finds application in power switching circuits within industrial automation and power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | 380µJ (on), 900µJ (off) |
| Test Condition | - |
| Gate Charge | 48 nC |
| Current - Collector (Ic) (Max) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 104 W |
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