HGTP10N120BN
IGBT 1200V 35A 298W TO220ABManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTP10N120BN is a 1200V NPT IGBT designed for high-voltage switching applications. This component features a continuous collector current (Ic) rating of 35A, with a pulsed capability (Icm) up to 80A. Its collector-emitter saturation voltage (Vce(on)) is a maximum of 2.7V at 15V gate-emitter voltage and 10A collector current. With a maximum power dissipation of 298W and a switching energy of 320µJ (on) and 800µJ (off) under specified test conditions (960V, 10A, 10 Ohm, 15V), it offers efficient performance. The gate charge is 100 nC. Operating across a temperature range of -55°C to 150°C (TJ), the HGTP10N120BN is housed in a TO-220-3 package for through-hole mounting. This device is suitable for use in power supplies and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 23ns/165ns |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Test Condition | 960V, 10A, 10Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 298 W |
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