HGTG7N60A4
IGBT 600V 34A 125W TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi HGTG7N60A4 is a 600V, 34A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, packaged in a TO-247-3, offers a maximum collector power dissipation of 125W. Key electrical characteristics include a collector-emitter saturation voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 7A collector current. The device exhibits a typical gate charge of 37 nC, with switching times of 11ns turn-on and 100ns turn-off at 25°C under a test condition of 390V, 7A, 25 Ohm, and 15V. Its low switching energy, 55µJ (on) and 60µJ (off), makes it suitable for applications in industrial motor drives, power factor correction, and uninterruptible power supplies. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 11ns/100ns |
| Switching Energy | 55µJ (on), 60µJ (off) |
| Test Condition | 390V, 7A, 25Ohm, 15V |
| Gate Charge | 37 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 56 A |
| Power - Max | 125 W |
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