HGTG40N60A4
IGBT 600V 75A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG40N60A4 is a high-speed, high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This TO-247-3 packaged device offers a 600V collector-emitter breakdown voltage and a continuous collector current of 75A, with a pulsed capability of 300A (Icm). The IGBT exhibits a low on-state voltage of 2.7V at 15V gate-emitter voltage and 40A collector current. Key performance metrics include a maximum power dissipation of 625W and switching energies of 400µJ (on) and 370µJ (off) under test conditions of 390V, 40A, 2.2O, and 15V. The device operates across a temperature range of -55°C to 150°C (TJ). It is commonly employed in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/145ns |
| Switching Energy | 400µJ (on), 370µJ (off) |
| Test Condition | 390V, 40A, 2.2Ohm, 15V |
| Gate Charge | 350 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 625 W |
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