HGTG30N60C3D
IGBT 600V 63A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG30N60C3D is a 600V, 63A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-247-3 package, offers a maximum continuous collector current of 63A and a pulsed collector current of 252A. Key performance parameters include a Vce(on) of 1.8V at 15V Vge and 30A Ic, with a gate charge of 162 nC. The device exhibits switching energies of 1.05mJ (on) and 2.5mJ (off), and a reverse recovery time of 60 ns. With a maximum power dissipation of 208W and an operating temperature range of -40°C to 150°C (TJ), the HGTG30N60C3D is suitable for demanding industrial power supplies, motor control, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | 1.05mJ (on), 2.5mJ (off) |
| Test Condition | - |
| Gate Charge | 162 nC |
| Current - Collector (Ic) (Max) | 63 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 252 A |
| Power - Max | 208 W |
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