HGTG30N60B3D
IGBT 600V 60A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG30N60B3D is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a maximum collector current of 60A, with a pulsed capability of 220A. Its low on-state voltage (Vce(on)) is 1.9V at 15V gate-emitter voltage and 30A collector current, while maintaining a switching energy of 550µJ (on) and 680µJ (off) under specified test conditions. The HGTG30N60B3D offers a typical turn-on delay of 36ns and turn-off delay of 137ns at 25°C. Packaged in a TO-247-3 through-hole configuration, it operates across a temperature range of -55°C to 150°C. This device is suitable for use in applications such as industrial motor control and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 36ns/137ns |
| Switching Energy | 550µJ (on), 680µJ (off) |
| Test Condition | 480V, 30A, 3Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 220 A |
| Power - Max | 208 W |
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