HGTG30N60A4D
IGBT 600V 75A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG30N60A4D is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a maximum collector current of 75A, with a pulsed capability of 240A (Icm). The onsemi HGTG30N60A4D offers a low on-state voltage (Vce(on)) of 2.6V at 15V gate-emitter voltage and 30A collector current, with a corresponding on-state power dissipation of 463W. Gate charge is specified at 225 nC. Switching characteristics include a turn-on delay of 25ns and turn-off delay of 150ns at 25°C, with switching energies of 280µJ (on) and 240µJ (off) under test conditions of 390V, 30A, 3 Ohm, and 15V. The device operates within an extended temperature range of -55°C to 150°C (TJ). Packaged in a TO-247-3 through-hole configuration, this IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 280µJ (on), 240µJ (off) |
| Test Condition | 390V, 30A, 3Ohm, 15V |
| Gate Charge | 225 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 463 W |
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