HGTG20N60C3D
IGBT 600V 45A 164W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG20N60C3D is a 600V, 45A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. With a maximum continuous collector current of 45A and a pulsed collector current of 300A, this component offers robust performance. The device features a low on-state voltage of 1.8V at 15V gate-source voltage and 20A collector current, contributing to efficient operation. Key parameters include a collector-emitter breakdown voltage of 600V, a maximum power dissipation of 164W, and a gate charge of 91nC. The reverse recovery time (trr) is specified at 55ns, with typical turn-on and turn-off delays of 28ns and 151ns respectively, under test conditions of 480V, 20A, 10 Ohm, and 15V. The HGTG20N60C3D is packaged in a TO-247-3 through-hole configuration and operates across a temperature range of -55°C to 150°C. This IGBT is commonly employed in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 28ns/151ns |
| Switching Energy | 500µJ (on), 500µJ (off) |
| Test Condition | 480V, 20A, 10Ohm, 15V |
| Gate Charge | 91 nC |
| Current - Collector (Ic) (Max) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 164 W |
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