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HGTG20N60B3D

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HGTG20N60B3D

IGBT 600V 40A TO247-3

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

onsemi HGTG20N60B3D is a 600V, 40A insulated gate bipolar transistor (IGBT) designed for high-power switching applications. This component features a collector current (Ic) of 40A and a pulsed collector current (Icm) of 160A, with a collector-emitter saturation voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 20A collector current. The HGTG20N60B3D offers a maximum power dissipation of 165W and a gate charge of 80 nC. It has a reverse recovery time (trr) of 55 ns and switching energies of 475µJ for turn-on and 1.05mJ for turn-off. The device is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -40°C to 150°C. This IGBT is suitable for applications in motor control, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)55 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Supplier Device PackageTO-247-3
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy475µJ (on), 1.05mJ (off)
Test Condition-
Gate Charge80 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)160 A
Power - Max165 W

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onsemi’s core components include:

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