HGTG20N60B3D
IGBT 600V 40A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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onsemi HGTG20N60B3D is a 600V, 40A insulated gate bipolar transistor (IGBT) designed for high-power switching applications. This component features a collector current (Ic) of 40A and a pulsed collector current (Icm) of 160A, with a collector-emitter saturation voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 20A collector current. The HGTG20N60B3D offers a maximum power dissipation of 165W and a gate charge of 80 nC. It has a reverse recovery time (trr) of 55 ns and switching energies of 475µJ for turn-on and 1.05mJ for turn-off. The device is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -40°C to 150°C. This IGBT is suitable for applications in motor control, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | 475µJ (on), 1.05mJ (off) |
| Test Condition | - |
| Gate Charge | 80 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 165 W |
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