HGTG20N60A4D
IGBT 600V 70A 290W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG20N60A4D is a 600V, 70A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device offers a maximum continuous collector current of 70A and a pulsed collector current of 280A, with a maximum power dissipation of 290W. Key performance characteristics include a low on-state voltage of 2.7V at 15V gate-emitter voltage and 20A collector current, and a gate charge of 142 nC. Switching characteristics are specified as 15ns turn-on delay and 73ns turn-off delay at 25°C, with a reverse recovery time of 35 ns. The switching energy is rated at 105µJ for turn-on and 150µJ for turn-off under the test condition of 390V, 20A, 3 Ohm, and 15V. Supplied in a TO-247-3 package, this through-hole component is suitable for industrial applications such as motor control and power factor correction circuits. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/73ns |
| Switching Energy | 105µJ (on), 150µJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 280 A |
| Power - Max | 290 W |
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