HGTG20N60A4
IGBT 600V 70A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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onsemi HGTG20N60A4 is a 600V, 70A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a collector current of 70A (280A pulsed) and a maximum power dissipation of 290W. The collector-emitter saturation voltage (Vce(on)) is rated at 2.7V at 15V Vge and 20A Ic. Typical switching times are 15ns (turn-on) and 73ns (turn-off) under the specified test conditions of 390V, 20A, 3 Ohm, and 15V. The gate charge is 142 nC. The HGTG20N60A4 is housed in a TO-247-3 package, suitable for through-hole mounting. Operating temperature range is from -55°C to 150°C (TJ). This component is utilized in industries such as industrial motor control and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/73ns |
| Switching Energy | 105µJ (on), 150µJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 280 A |
| Power - Max | 290 W |
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