HGTG12N60B3
IGBT 600V 27A 104W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG12N60B3 is a 600V, 27A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a maximum collector power dissipation of 104W and a collector current of 27A (110A pulsed). With a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 12A collector current, it minimizes conduction losses. The HGTG12N60B3 exhibits typical switching times of 26ns turn-on and 150ns turn-off, with associated switching energies of 150µJ (on) and 250µJ (off) under test conditions of 480V, 12A, 25 Ohm, and 15V. The gate charge is rated at 51 nC. Housed in a TO-247-3 package, this through-hole component operates across a temperature range of -55°C to 150°C (TJ). It is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 26ns/150ns |
| Switching Energy | 150µJ (on), 250µJ (off) |
| Test Condition | 480V, 12A, 25Ohm, 15V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 27 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 104 W |
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