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HGTG12N60B3

IGBT 600V 27A 104W TO247

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi HGTG12N60B3 is a 600V, 27A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a maximum collector power dissipation of 104W and a collector current of 27A (110A pulsed). With a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 12A collector current, it minimizes conduction losses. The HGTG12N60B3 exhibits typical switching times of 26ns turn-on and 150ns turn-off, with associated switching energies of 150µJ (on) and 250µJ (off) under test conditions of 480V, 12A, 25 Ohm, and 15V. The gate charge is rated at 51 nC. Housed in a TO-247-3 package, this through-hole component operates across a temperature range of -55°C to 150°C (TJ). It is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
Supplier Device PackageTO-247-3
IGBT Type-
Td (on/off) @ 25°C26ns/150ns
Switching Energy150µJ (on), 250µJ (off)
Test Condition480V, 12A, 25Ohm, 15V
Gate Charge51 nC
Current - Collector (Ic) (Max)27 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)110 A
Power - Max104 W

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onsemi manufactures power and analog semiconductor components focused on energy efficiency, sensing, and intelligent power management.

onsemi’s core components include:

  • Power semiconductors (MOSFETs, IGBTs, and SiC devices)
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onsemi is known for power, sensing, and energy-efficient semiconductor product lines used in automotive, industrial, and energy applications.

Key onsemi product lines include:

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  • AR series image sensors - CMOS sensors for automotive and industrial vision
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  • FD / FDM series MOSFETs - discrete power transistors
  • NB / NC series - signal conditioning and interface ICs
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