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HGTG12N60A4D

IGBT 600V 54A 167W TO247

Manufacturer: onsemi

Categories: Single IGBTs

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The onsemi HGTG12N60A4D is a high-speed, high-voltage N-channel IGBT designed for demanding applications. Featuring a 600V collector-emitter breakdown voltage and a continuous collector current rating of 54A at 25°C (96A pulsed), this component offers excellent power handling capabilities. Its low on-state voltage of 2.7V at 15V gate-emitter voltage and 12A collector current, coupled with low switching energies of 55µJ (on) and 50µJ (off), minimize conduction and switching losses. The device exhibits typical turn-on delay of 17ns and turn-off delay of 96ns at 25°C, with a reverse recovery time of 30ns. With a maximum power dissipation of 167W and an operating temperature range of -55°C to 150°C (TJ), the HGTG12N60A4D is suitable for use in power supplies, motor control, and industrial applications. It is supplied in a TO-247-3 package for through-hole mounting.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)30 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Supplier Device PackageTO-247-3
IGBT Type-
Td (on/off) @ 25°C17ns/96ns
Switching Energy55µJ (on), 50µJ (off)
Test Condition390V, 12A, 10Ohm, 15V
Gate Charge78 nC
Current - Collector (Ic) (Max)54 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)96 A
Power - Max167 W

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onsemi manufactures power and analog semiconductor components focused on energy efficiency, sensing, and intelligent power management.

onsemi’s core components include:

  • Power semiconductors (MOSFETs, IGBTs, and SiC devices)
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onsemi is known for power, sensing, and energy-efficient semiconductor product lines used in automotive, industrial, and energy applications.

Key onsemi product lines include:

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  • FD / FDM series MOSFETs - discrete power transistors
  • NB / NC series - signal conditioning and interface ICs
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