HGTG11N120CND
IGBT NPT 1200V 43A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG11N120CND is a Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 43 A, with a pulsed current rating of 80 A. The collector-emitter saturation voltage (Vce(on)) is a maximum of 2.4 V at 15 V gate-emitter voltage and 11 A collector current.
With a maximum power dissipation of 298 W, the HGTG11N120CND is suitable for demanding power conversion tasks. Key switching characteristics include a turn-on delay (Td(on)) of 23 ns and a turn-off delay (Td(off)) of 180 ns at 25°C, along with a switching energy of 950 µJ (on) and 1.3 mJ (off) under test conditions of 960 V, 11 A, 10 Ohm, and 15 V. The reverse recovery time (trr) is 70 ns. The device is packaged in a TO-247-3 through-hole configuration and operates across a temperature range of -55°C to 150°C (TJ). This IGBT is commonly utilized in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 11A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 23ns/180ns |
| Switching Energy | 950µJ (on), 1.3mJ (off) |
| Test Condition | 960V, 11A, 10Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 43 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 298 W |
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