HGTG10N120BND
IGBT NPT 1200V 35A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTG10N120BND is a 1200 V, 35 A NPT IGBT designed for high-power switching applications. This component offers a low Vce(on) of 2.7 V at 15 V, 10 A, contributing to reduced conduction losses. Key parameters include a collector current (Ic) of 35 A, a pulsed collector current (Icm) of 80 A, and a maximum power dissipation of 298 W. The HGTG10N120BND features a gate charge of 100 nC and exhibits switching times of 23 ns (turn-on) and 165 ns (turn-off) at 25°C, with switching energy rated at 850 µJ (on) and 800 µJ (off) under test conditions of 960 V, 10 A, 10 Ohm, 15 V. Reverse recovery time (trr) is specified at 70 ns. This device is housed in a TO-247-3 package for through-hole mounting, operating across a temperature range of -55°C to 150°C (TJ). It finds application in industrial motor drives, power supplies, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 23ns/165ns |
| Switching Energy | 850µJ (on), 800µJ (off) |
| Test Condition | 960V, 10A, 10Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 298 W |
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