HGTD7N60C3S9A
IGBT 600V 14A TO252AAManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTD7N60C3S9A is a 600V, 14A Insulated Gate Bipolar Transistor (IGBT) designed for surface mounting in a TO-252AA package. This device offers a maximum continuous collector current of 14A, with a pulsed capability of 56A. The IGBT exhibits a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 7A collector current. It features a gate charge of 23 nC and a maximum power dissipation of 60W. Switching characteristics include an on-state switching energy of 165µJ and an off-state switching energy of 600µJ. The HGTD7N60C3S9A operates across a temperature range of -40°C to 150°C (TJ) and is supplied in Tape & Reel packaging. This component is utilized in applications such as power factor correction, uninterruptible power supplies (UPS), and general-purpose inverters across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 7A |
| Supplier Device Package | TO-252AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | 165µJ (on), 600µJ (off) |
| Test Condition | - |
| Gate Charge | 23 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 56 A |
| Power - Max | 60 W |
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