HGTD3N60C3S9A
IGBT 600V 6A 33W TO252AAManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTD3N60C3S9A is a 600V, 6A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This device features a maximum collector power dissipation of 33W and a low collector-emitter saturation voltage (Vce(on)) of 2V at 15V Vge and 3A Ic. The HGTD3N60C3S9A offers a pulsed collector current (Icm) of 24A and exhibits switching energies of 85µJ (turn-on) and 245µJ (turn-off) under specified test conditions (480V, 3A, 82O, 15V). Its standard input type and surface mount capability, housed in a TO-252AA package, make it suitable for demanding power electronics designs. The operating temperature range is -40°C to 150°C (TJ). This component finds application in power factor correction circuits, uninterruptible power supplies (UPS), and industrial motor drives. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 3A |
| Supplier Device Package | TO-252AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | 85µJ (on), 245µJ (off) |
| Test Condition | 480V, 3A, 82Ohm, 15V |
| Gate Charge | 10.8 nC |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 24 A |
| Power - Max | 33 W |
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