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HGTD1N120BNS9A

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HGTD1N120BNS9A

IGBT NPT 1200V 5.3A TO252AA

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi HGTD1N120BNS9A is a 1200V Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for surface mounting in a TO-252AA package. This component offers a continuous collector current (Ic) of 5.3A and a pulsed collector current (Icm) of 6A, with a maximum power dissipation of 60W. Key specifications include a gate charge of 14nC and a low on-state voltage (Vce(on)) of 2.9V at 15V, 1A. Switching characteristics at 960V, 1A, 82 Ohm, 15V show turn-on delay (Td(on)) of 15ns and turn-off delay (Td(off)) of 67ns, with switching energies of 70µJ (on) and 90µJ (off). Operating temperature range is from -55°C to 150°C. This device is commonly utilized in power factor correction (PFC) circuits, uninterruptible power supplies (UPS), and general purpose inverters.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 1A
Supplier Device PackageTO-252AA
IGBT TypeNPT
Td (on/off) @ 25°C15ns/67ns
Switching Energy70µJ (on), 90µJ (off)
Test Condition960V, 1A, 82Ohm, 15V
Gate Charge14 nC
Current - Collector (Ic) (Max)5.3 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)6 A
Power - Max60 W

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onsemi manufactures power and analog semiconductor components focused on energy efficiency, sensing, and intelligent power management.

onsemi’s core components include:

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Key onsemi product lines include:

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