HGTD1N120BNS9A
IGBT NPT 1200V 5.3A TO252AAManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGTD1N120BNS9A is a 1200V Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for surface mounting in a TO-252AA package. This component offers a continuous collector current (Ic) of 5.3A and a pulsed collector current (Icm) of 6A, with a maximum power dissipation of 60W. Key specifications include a gate charge of 14nC and a low on-state voltage (Vce(on)) of 2.9V at 15V, 1A. Switching characteristics at 960V, 1A, 82 Ohm, 15V show turn-on delay (Td(on)) of 15ns and turn-off delay (Td(off)) of 67ns, with switching energies of 70µJ (on) and 90µJ (off). Operating temperature range is from -55°C to 150°C. This device is commonly utilized in power factor correction (PFC) circuits, uninterruptible power supplies (UPS), and general purpose inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 1A |
| Supplier Device Package | TO-252AA |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 15ns/67ns |
| Switching Energy | 70µJ (on), 90µJ (off) |
| Test Condition | 960V, 1A, 82Ohm, 15V |
| Gate Charge | 14 nC |
| Current - Collector (Ic) (Max) | 5.3 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 6 A |
| Power - Max | 60 W |
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