HGT1S20N60C3S9A
IGBT 600V 45A TO263ABManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGT1S20N60C3S9A is an IGBT designed for demanding power applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 45 A, with a pulsed capability of 300 A. Its low on-state voltage of 1.8 V at 15 V gate-emitter voltage and 20 A collector current, coupled with switching energies of 295 µJ (on) and 500 µJ (off) under test conditions of 480 V, 20 A, 10 Ohm, and 15 V, ensures efficient power conversion. The HGT1S20N60C3S9A has a maximum power dissipation of 164 W and a gate charge of 91 nC. Packaged in a TO-263AB (D2PAK) surface mount configuration and supplied on tape and reel, this component is suitable for use in industrial power supplies, motor drives, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 28ns/151ns |
| Switching Energy | 295µJ (on), 500µJ (off) |
| Test Condition | 480V, 20A, 10Ohm, 15V |
| Gate Charge | 91 nC |
| Current - Collector (Ic) (Max) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 164 W |
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