HGT1S20N60A4S9A
IGBT 600V 70A 290W TO263ABManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGT1S20N60A4S9A is a 600V, 70A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a maximum collector current of 70A and a pulsed collector current of 280A. With a power dissipation of 290W and a low on-state voltage of 2.7V at 15V gate-emitter voltage and 20A collector current, it ensures efficient operation. The device exhibits excellent switching characteristics with turn-on and turn-off delays of 15ns and 73ns respectively at 25°C, and switching energies of 105µJ (on) and 150µJ (off). The HGT1S20N60A4S9A is housed in a TO-263-3, D2PAK surface-mount package, suitable for demanding thermal environments. Its robust design and performance parameters make it ideal for use in power supplies, motor control, and industrial automation systems. This device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/73ns |
| Switching Energy | 105µJ (on), 150µJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 280 A |
| Power - Max | 290 W |
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