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HGT1S20N35G3VLS

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HGT1S20N35G3VLS

IGBT 380V 20A 150W TO263AB

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi HGT1S20N35G3VLS is a high-performance IGBT with a maximum collector current of 20 A and a collector-emitter breakdown voltage of 375 V. This device features a collector-emitter saturation voltage (Vce(on)) of 2.8 V at 5 V gate drive and 20 A. The input type is logic, and it is packaged in a TO-263-3, D2PAK (TO-263AB) surface-mount package. With a maximum power dissipation of 150 W and an operating temperature range of -40°C to 175°C, this component is suitable for demanding applications in power supply, motor control, and industrial automation sectors. The gate charge is specified at 28.7 nC.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeLogic
Vce(on) (Max) @ Vge, Ic2.8V @ 5V, 20A
Supplier Device PackageTO-263 (D2PAK)
IGBT Type-
Td (on/off) @ 25°C-/15µs
Switching Energy-
Test Condition300V, 10A, 25Ohm, 5V
Gate Charge28.7 nC
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)375 V
Power - Max150 W

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