HGT1S14N36G3VLS
IGBT 390V 18A 100W TO263ABManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGT1S14N36G3VLS is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. With a collector-emitter breakdown voltage of 390V and a continuous collector current rating of 18A, this device offers robust performance. The IGBT features a low on-state voltage of 2.2V at 5V gate-emitter voltage and 14A collector current, minimizing conduction losses. Its 100W power dissipation capability and surface mount TO-263 (D2PAK) package facilitate efficient thermal management in compact designs. The logic input type and a typical gate charge of 24 nC ensure straightforward drive requirements. This component is well-suited for use in industrial motor drives, power supplies, and renewable energy systems. The device is supplied in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 5V, 14A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/7µs |
| Switching Energy | - |
| Test Condition | 300V, 7A, 25Ohm, 5V |
| Gate Charge | 24 nC |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Power - Max | 100 W |
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