HGT1S12N60A4S9A
IGBT 600V 54A 167W TO263ABManufacturer: onsemi
Categories: Single IGBTs
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The onsemi HGT1S12N60A4S9A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 54A, with a pulsed capability of 96A. Its low on-state voltage of 2.7V at 15V gate-emitter voltage and 12A collector current, coupled with switching energies of 55µJ (on) and 50µJ (off) under specified test conditions (390V, 12A, 10O, 15V), ensure efficient power conversion.
The HGT1S12N60A4S9A is housed in a TO-263-3, D2PAK surface-mount package, facilitating streamlined board assembly. With a maximum power dissipation of 167W and an operating temperature range from -55°C to 150°C, it is suitable for use in power supplies, motor control, and industrial automation systems. The gate charge is rated at 78 nC.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17ns/96ns |
| Switching Energy | 55µJ (on), 50µJ (off) |
| Test Condition | 390V, 12A, 10Ohm, 15V |
| Gate Charge | 78 nC |
| Current - Collector (Ic) (Max) | 54 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 167 W |
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