The onsemi FGY75T95SQDT is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 950 V collector-emitter breakdown voltage and a continuous collector current (Ic) rating of 150 A, with a pulsed capability (Icm) of 300 A. It dissipates a maximum power of 434 W and is housed in a TO-247-3 package for through-hole mounting. Key switching characteristics include an on-state voltage (Vce(on)) of 2.11V at 15V Vge and 75A Ic, with switching energies of 8.8mJ (on) and 3.2mJ (off) under test conditions of 600V, 75A, 4.7 Ohm, and 15V. The device operates across an extended temperature range of -55°C to 175°C (TJ). This IGBT is suitable for power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 259 ns |
| Vce(on) (Max) @ Vge, Ic | 2.11V @ 15V, 75A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 28.8ns/117ns |
| Switching Energy | 8.8mJ (on), 3.2mJ (off) |
| Test Condition | 600V, 75A, 4.7Ohm, 15V |
| Gate Charge | 137 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 950 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 434 W |
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