The onsemi FGY75T95LQDT is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 950 V collector-emitter breakdown voltage and a continuous collector current rating of 150 A, with a pulsed capability of 225 A. It offers a low on-state voltage (Vce(on)) of 1.69 V at 15 V gate-emitter voltage and 75 A collector current. The device has a maximum power dissipation of 453 W and an operating temperature range of -55°C to 175°C. Key switching parameters include a gate charge of 663.3 nC, turn-on delay (Td(on)) of 52 ns, and turn-off delay (Td(off)) of 496 ns at 25°C. The TO-247-3 package facilitates through-hole mounting. This IGBT is suitable for use in power factor correction, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 259 ns |
| Vce(on) (Max) @ Vge, Ic | 1.69V @ 15V, 75A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 52ns/496ns |
| Switching Energy | 2mJ (on), 1.8mJ (off) |
| Test Condition | 600V, 37.5A, 4.7Ohm, 15V |
| Gate Charge | 663.3 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 950 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 453 W |
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