FGP5N60UFDTU
IGBT 600V 10A 81W TO220Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGP5N60UFDTU is a 600V Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a maximum continuous collector current (Ic) of 10A and a pulsed collector current (Icm) of 15A. The onsemi FGP5N60UFDTU offers a low collector-emitter saturation voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 5A collector current, with a corresponding power dissipation (Pd) of 81W. It exhibits a gate charge of 19.5 nC and switching times of 6ns (td(on)) and 44ns (td(off)) at 25°C under a test condition of 400V, 5A, 20 Ohm, and 15V. The reverse recovery time (trr) is specified at 30ns. With a junction temperature range of -55°C to 150°C, this device is housed in a standard TO-220-3 package suitable for through-hole mounting. The onsemi FGP5N60UFDTU is utilized in industries such as industrial power supplies, motor control, and lighting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 5A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 6ns/44ns |
| Switching Energy | 75µJ (on), 59µJ (off) |
| Test Condition | 400V, 5A, 20Ohm, 15V |
| Gate Charge | 19.5 nC |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 15 A |
| Power - Max | 81 W |