FGP5N60LS
IGBT FIELD STOP 600V 10A TO220-3Manufacturer: onsemi
Categories: Single IGBTs
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onsemi FGP5N60LS is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. This device offers a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 10 A, with a pulsed capability of up to 36 A (Icm). Optimized for performance, it features a low on-state voltage (Vce(on) Max) of 3.2 V at 12 V gate-emitter voltage and 14 A collector current, and a low switching energy of 38 µJ turn-on and 130 µJ turn-off under specified test conditions. The FGP5N60LS has a maximum power dissipation of 83 W and a gate charge of 18.3 nC. It is packaged in a standard TO-220-3 through-hole configuration for easy board mounting and operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in industrial motor drives, power supplies, and lighting control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 12V, 14A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 4.3ns/36ns |
| Switching Energy | 38µJ (on), 130µJ (off) |
| Test Condition | 400V, 5A, 10Ohm, 15V |
| Gate Charge | 18.3 nC |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 36 A |
| Power - Max | 83 W |
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