FGP40N6S2
IGBT 600V 75A 290W TO220ABManufacturer: onsemi
Categories: Single IGBTs
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onsemi FGP40N6S2 is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This device features a continuous collector current rating of 75A and a pulsed collector current of 180A. The saturation voltage, Vce(on), is a maximum of 2.7V at 15V Vge and 20A Ic. With a maximum power dissipation of 290W and switching energies of 115µJ (on) and 195µJ (off) at 390V, 20A, 3 Ohm, 15V, the FGP40N6S2 offers efficient performance. The gate charge is 35 nC, with typical on-delay and off-delay times of 8ns and 35ns respectively at 25°C. Packaged in a TO-220-3 through-hole configuration, this component is suited for industrial automation, motor control, and power supply applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 8ns/35ns |
| Switching Energy | 115µJ (on), 195µJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V |
| Gate Charge | 35 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 290 W |
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