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FGP30N6S2

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FGP30N6S2

IGBT 600V 45A 167W TO220AB

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi FGP30N6S2 is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, packaged in a TO-220-3 configuration, offers a continuous collector current (Ic) capability of 45A, with a pulsed collector current (Icm) of 108A. It features a maximum power dissipation of 167W and a collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V Vge and 12A Ic. The device exhibits a typical gate charge of 23 nC and switching energies of 55µJ (on) and 100µJ (off) under specified test conditions (390V, 12A, 10 Ohm, 15V). Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 12A
Supplier Device PackageTO-220-3
IGBT Type-
Td (on/off) @ 25°C6ns/40ns
Switching Energy55µJ (on), 100µJ (off)
Test Condition390V, 12A, 10Ohm, 15V
Gate Charge23 nC
Current - Collector (Ic) (Max)45 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)108 A
Power - Max167 W

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