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FGP20N60UFDTU

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FGP20N60UFDTU

IGBT 600V 40A 165W TO220

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

onsemi FGP20N60UFDTU is a 600V, 40A Field Stop Insulated Gate Bipolar Transistor (IGBT) in a TO-220-3 package. This device features a maximum power dissipation of 165W and a collector current of 40A, with a pulsed capability of 60A. Key electrical characteristics include a Vce(on) of 2.4V at 15V Vge and 20A Ic, and a switching energy of 380µJ (on) and 260µJ (off) under test conditions of 400V, 20A, 10 Ohm, and 15V Vge. The gate charge is 63 nC, with typical turn-on and turn-off delays of 13ns and 87ns respectively at 25°C. The FGP20N60UFDTU offers a robust operating temperature range from -55°C to 150°C (TJ). This component is commonly utilized in power factor correction, industrial motor drives, and uninterruptible power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)35 ns
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 20A
Supplier Device PackageTO-220-3
IGBT TypeField Stop
Td (on/off) @ 25°C13ns/87ns
Switching Energy380µJ (on), 260µJ (off)
Test Condition400V, 20A, 10Ohm, 15V
Gate Charge63 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)60 A
Power - Max165 W

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