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FGL60N100DTU

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FGL60N100DTU

IGBT 1000V 60A 176W TO264

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

onsemi FGL60N100DTU is a trench IGBT with a collector-emitter breakdown voltage of 1000 V and a continuous collector current of 60 A. This device features a maximum power dissipation of 176 W and a pulsed collector current of 120 A. The on-state voltage drop (Vce(on)) is specified at 2.9 V at a gate-emitter voltage (Vge) of 15 V and collector current (Ic) of 60 A. The gate charge is 230 nC, and the reverse recovery time (trr) is 1.5 µs. Packaged in a TO-264-3 (TO-264AA) through-hole configuration, this IGBT operates within a temperature range of -55°C to 150°C. It is suitable for use in power switching applications within the industrial and automotive sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)1.5 µs
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Supplier Device PackageTO-264-3
IGBT TypeTrench
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge230 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)120 A
Power - Max176 W

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