FGL60N100BNTDTU
IGBT 1000V 60A 180W TO264Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGL60N100BNTDTU is an NPT and Trench IGBT designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 1000 V and a continuous collector current of 60 A, with a pulsed current capability (Icm) of 120 A. Its maximum power dissipation is 180 W. The IGBT features a gate charge of 275 nC and a collector-emitter saturation voltage (Vce(on)) of 2.9V at 15V gate drive and 60A collector current, specified at 600V, 60A, 51 Ohm, 15V. Typical on-delay and off-delay times are 140 ns and 630 ns respectively at 25°C. The FGL60N100BNTDTU is housed in a TO-264-3 package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This device is suitable for power supplies, industrial motor control, and other high-power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.2 µs |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Supplier Device Package | TO-264-3 |
| IGBT Type | NPT and Trench |
| Td (on/off) @ 25°C | 140ns/630ns |
| Switching Energy | - |
| Test Condition | 600V, 60A, 51Ohm, 15V |
| Gate Charge | 275 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 180 W |
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